a study on electrochemical corrosion of surface reaction of pyrite in high alkali environment 高堿環(huán)境中黃鐵礦表面反應的腐蝕電化學研究
the surface reaction of water atomized 304l austenitic stainless steel powder during sintering has been studied 摘要研究了水霧化奧氏體不銹鋼粉末在致密時的表面化學反應。
the experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer; 2 . we studied different surface progress . comparable with conventional method, the surface with nh4f cleaning step have superior thermal stability with hfo2, nh4f cleaning step is introduced can reduces leakage current and eot; 3 柵泄漏電流的減小可歸于氧空位缺陷的減小,即高的濺射氧氣氛和氧氣氛退火有助于減小hfo_2柵介質中的氧空位缺陷;4)研究了反應濺射制備的hfo_2柵介質漏電流機制及其silc效應。
xrd and sem analysis showed that the main composition of the white substance which formed in cracks is caco3, which can block cracks and is probably the main cause of self-sealing . two processes which called surface reaction process and diffuse reaction process are defined in the formation process of caco3 . the phenomenons in self-sealing experiment can be explained by those two processes 對試件裂縫中沉積的白色物質做sem、xrd分析得出其成份主要為caco_3,caco_3堵塞裂縫應該是引起自愈現(xiàn)象的主要原因;caco_3的生成包括表面反應和擴散反應兩個階段,這在一定程度上解釋了自愈現(xiàn)象先快后慢和自愈幅度砂漿混凝土凈漿。
the properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas-phase reaction parameters were discussed, showing that the deposition of p-c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique,, the effects of experimental parameters on the concentration of the precursors and the gas-phase reactions in the plasma have been obtained; the main reaction precursors for film deposition identified; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe-pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate 采用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、sp~3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等離子體增強pld的氣相反應,給出了提高薄膜晶態(tài)sp~3鍵合結構成分和薄膜的含n量可行性途徑;應用pe-cvd技術以ch_4+n_2為反應氣體并引入輔助氣體h_2,得到了含n量為56at的晶態(tài)cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態(tài)等特性及其與氣體壓強和放電電流的關系,證明了-c_3n_4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;采用光學發(fā)射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規(guī)律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯(lián)系;采用高氣壓pe-pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,并可顯著提高晶態(tài)碳氮材料的生長速率。